DETERMINATION OF THE CONCENTRATION PROFILE OF A DOPING IMPURITY IN SILICON EPITAXIAL STRUCTURES OF N-N(-P(+) TYPES BY LOCAL ELECTROCHEMICALANALYSIS() AND N)

The possibility of using local electrochemical analysis for the routin e monitoring of concentration profiles in silicon epitaxial structures of n-n(+) and n-p(+) types is considered. Local electrochemical analy sis is based on the electrochemical probing of a site 2 mm in diameter of an epitaxial film under conditions of galvanostatic dissolution. T he variation of the potential with time is recorded, and the concentra tion profile is subsequently calculated by an empirical expression obt ained with the use of reference samples.