HYDROGEN INCORPORATION DURING NUCLEATION AND GROWTH OF C-BN FILMS

Citation
M. Kuhr et al., HYDROGEN INCORPORATION DURING NUCLEATION AND GROWTH OF C-BN FILMS, DIAMOND AND RELATED MATERIALS, 5(9), 1996, pp. 984-989
Citations number
23
ISSN journal
09259635
Volume
5
Issue
9
Year of publication
1996
Pages
984 - 989
Database
ISI
SICI code
0925-9635(1996)5:9<984:HIDNAG>2.0.ZU;2-S
Abstract
The hydrogen content of BN films deposited by the ICP plasma method fr om trimethyl borazine and N-2 has been investigated integrally and spa tially resolved by elastic recoil detection. Hydrogen contents between 15% and 25% have been found for conditions allowing the formation of c-BN compared with 4%-10% for h-BN conditions (low bias voltages). How ever, under c-BN conditions hydrogen is concentrated within the sp(2) parts of the film, particularly within the nucleation layer. Addition of hydrogen to the gas phase prevents the formation of c-BN and leads to h-BN films with high hydrogen contents. FTIR examination shows that the films do not contain BH and NH bonds; traces of OH and CHx do not add up to the total hydrogen content. Therefore most of the hydrogen must be free, for example incorporated on interstitials.