The photothermal displacement technique at transient thermal gratings
and photothermal microscopy, both providing a spatial resolution on a
micrometer scale, were used to investigate the thermal properties of c
rystallites and regions located between crystallites of diamond grown
by microwave plasma chemical vapour deposition. The thermal properties
are related to the structural properties by micro-Raman/photoluminesc
ence spectroscopy and infrared spectroscopy. In the vicinity of a high
ly defective region located between crystallites, which exhibits a pre
ferential incorporation of non-diamond carbon, silicon-vacancy complex
es and hydrogen, a reduction of the thermal diffusivity by about 35% w
as observed. Depending upon whether this region is a grain boundary or
a defect-filled microcrack, the decrease in the thermal diffusivity i
s caused by enhanced phonon scattering from these defects accumulated
at the boundary or by a vanishing transmission probability of phonons
across the crack. High thermal conductivities between 1500 W m(-1)K(-1
) and 1700 W m(-1)K(-1) were determined within the crystallites at roo
m temperature.