FABRICATION AND PROPERTIES OF MO CONTACTS TO AMORPHOUS CUBIC BORON-NITRIDE (A-CBN) LAYERS

Mo contacts of areas varying from 2.4 to 9.4 mm(2) were electron beam deposited onto undoped and sulphur doped a-cBN layers. Layers were gro wn by the reactive pulse plasma method on oxidized, or oxidized and su bsequently covered with Au, silicon substrates. Current-voltage measur ements of lateral Mo/a-cBN/Mo structures revealed that obtained contac ts are non-rectifying high-resistive Schottky contacts: 2 x 10(5)-2 x 10(7) Ohm cm(2) in the case of doped and 3 x 10(8)-10(10) Ohm cm(2) in the case of undoped films. In this article suggestions are also made about possible ways of lowering these resistivities.