Experimental studies of area selective metallization of diamond films
are presented with emphasis on (i) laser activation of diamond surface
for electroless metal plating, (ii) electroless metal deposition onto
the activated surface areas, and (iii) diamond growth on the metal-pa
tterned diamond films, encapsulating metal patterns into diamond. The
activation of the diamond surface for electroless metal plating was ac
hieved by laser-induced modification of the film surface during ablati
ve etching. Transformations in the valence band structure of diamond u
pon laser processing were studied by Auger electron spectroscopy and r
elated to a mechanism of activation of the diamond surface for electro
less metal plating. It was concluded that the capability of laser-acti
vated diamond surface to reduce metal ions from electroless solution w
as due to the formation of non-zero density of electronic states in th
e gap of diamond. Encapsulation of the electroless copper lines into d
iamond films was performed by means of the diamond growth onto the cop
per-plated diamond films. The composition and electrical properties of
the encapsulated copper lines were studied, revealing high purity and
low electrical resistivity of the encapsulated electroless copper.