HIGH-PRESSURE CRYSTAL PHASE OF CARBON NITRIDE

Citation
A. Badzian et T. Badzian, HIGH-PRESSURE CRYSTAL PHASE OF CARBON NITRIDE, DIAMOND AND RELATED MATERIALS, 5(9), 1996, pp. 1051-1052
Citations number
8
ISSN journal
09259635
Volume
5
Issue
9
Year of publication
1996
Pages
1051 - 1052
Database
ISI
SICI code
0925-9635(1996)5:9<1051:HCPOCN>2.0.ZU;2-U
Abstract
The existence of the hard phase C3N4 carbon nitride is under dispute. The conditions needed for high pressure/high temperature synthesis of this hard phase include increasing the nitrogen content by using azide s and the elimination of hydrogen from the starting material. Graphiti c type CNx materials have been synthesized by a microwave nitrogen pla sma CVD process. The material possesses turbostratic structure A = 2.6 0 Angstrom, C = 7.28 Angstrom and presumably has vacancies in the basa l planes.