The chemical reaction which forms the CuGaSe2 phase has been investiga
ted by differential thermal analysis and powder X-ray diffraction. The
two mixtures of CuGa+2Se and Cu+Ga+2Se are used as starting materials
. In the former mixture, the CuGaSe2 phase has been formed incompletel
y below the melting point of CuGaSe2. In the latter mixture, the CuGaS
e2 phase has been formed by the exothermic reaction between CuSe2 and
Ga phases at about 900 degrees C, after the formation of the CuSe2 pha
se below 380 degrees C. In contrast to the case of CuInSe2, the seleni
zation of CuGa alloy is not necessarily required for growing the CuGaS
e2 single phase. The chemical reaction between Cu selenides and Ga at
temperatures higher than 900 degrees C works to remove heterogeneous p
roducts and form a CuGaSe2 single phase.