This paper presents a comprehensive study on the effects of high-level
free-carrier injection on the current transport of bipolar junction t
ransistors (BJTs). Detailed information for the free-carrier concentra
tion, electric field, and drift and diffusion current components in th
e quasi-neutral base (QNB) under high-level injection are calculated u
sing the modified ambipolar transport equation and using several diffe
rent approximations for the majority-carrier current in the QNB. It is
shown that high-level injection can create a large retarding field wh
ich is in the opposite direction of the built-in field associated with
the nonuniform doping concentration. High-level injection also enhanc
es recombination in the QNB, thus resulting in a position-dependent mi
nority-carrier current in the region even if the base is thin. Our res
ults further suggest that the widely used zero majority current approx
imation gives rise to a larger error compared to other lesser known ap
proximations.