DOWN TO 0.1 MU-M PATTERN REPLICATION IN SYNCHROTRON-RADIATION LITHOGRAPHY

We studied sub-quarter- to sub-0.1-mu m pattern replication characteri stics in synchrotron radiation (SR) lithography using a highly accurat e low-contrast mask. AZ-PN100 (a chemical amplification negative-type resist) has a wide exposure latitude of more than +/-10% for lines and spaces down to 0.12 mu m at a post exposure baking temperature of 110 degrees C. Lines and spaces down to 0.1 mu m were clearly replicated in AZ-PN100. Sub-0.1-mu m lines and spaces and various types of patter n with 0.1 mu m features were successfully replicated in ZEP-520. Thes e results indicate that SR lithography has potential for 0.1-mu m patt ern replication. Insufficient mask linearity reduced the common exposu re latitude. However, the mask feature bias technique can be used to e xpand the common exposure latitude.