DIRECT BONDING BETWEEN INP SUBSTRATE AND MAGNETOOPTIC WAVE-GUIDES

Wafer direct bonding was demonstrated between InP and magnetooptic mat erials. The effects of chemical treatment of two wafers before placing them into contact were investigated in order to enhance the durabilit y of the bonded wafers through the various device fabrication processe s. Phosphoric acid etching at a low temperature proved to be the most suitable treatment for the bonding between InP and gadolinium gallium garnet Gd3Ga5O12. In the case of this treatment, the bonding was studi ed between a planar InP substrate and magnetooptic waveguides on the g arnet films.