PREPARATION AND MICROSTRUCTURE OF NANOSIZED GAN CRYSTALS

Galllium nitride crystals in neuro-scale have been fabricated by dc ar c plasma method using gallium and N-2+NH3 as starting materials. Trans mission electron microscope, selected area diffraction and x-ray diffr action investigation of the as-grown GaN crystals show that the well f aceted crystals are single crystalline GaN in wurtzite structure havin g lattice constants a(0) = 3.18 Angstrom and c(0) = 5.18 Angstrom.