The proposed multilayer technology makes it possible to approximate a
continuous phase distribution by discrete phase steps. Compared with b
inary techniques, a higher diffraction efficiency can be achieved. In
most known processes a bulk substrate is used and etched directly; the
refore it is difficult to control the height of the phase steps. We pr
opose applying layers of a well-known thickness and structuring them w
ith a selective etching process. In this new multilayer process for re
flecting elements a system of metal and dielectric layers is used that
can easily be produced by standard methods. (C) 1996 Optical Society
of America