THEORETICAL-MODELS OF FAST CRYSTALLIZATION OF A-SI THIN-FILMS

In this gaper, we report the models of fast recrystallization processe s in a-Si thin films. An important feature of the modeling of nucleati on in a-Si films is the capability of allowing description of non-equi librium solidification including the distribution of small crystalline clusters which can be responsible for visible photoluminescence. We i ntegrate the results of the description of nucleation and growth on th e phase interface of c-Si from a-Si or l-Si. The transient time, nucle ation rate and growth rate were determined as a function of temperatur e and the position of local extremes of these functions were stated. T he solidification velocity was calculated from the nucleation rate and growth rate with respect to the temperature distribution in a system. The suitability of the particular approximations and models is discus sed.