NUCLEATION AND COALESCENCE PHENOMENA IN THE TRANSFORMATION OF SEMICONDUCTOR-DOPED GLASSES

Authors
Citation
Sh. Risbud, NUCLEATION AND COALESCENCE PHENOMENA IN THE TRANSFORMATION OF SEMICONDUCTOR-DOPED GLASSES, Thermochimica acta, 280, 1996, pp. 319-332
Citations number
35
Categorie Soggetti
Chemistry Analytical
Journal title
ISSN journal
00406031
Volume
280
Year of publication
1996
Pages
319 - 332
Database
ISI
SICI code
0040-6031(1996)280:<319:NACPIT>2.0.ZU;2-Z
Abstract
The nucleation, coalescence and growth of semiconductor particles prec ipitated from supersaturated silicate and phosphate glasses have been investigated using a number of II-IV, III-V and elemental semiconducto r particles. The nucleation phenomena and the resulting microstructure are of intense interest for optical device applications and have beco me one useful way of creating quantum dot structures. This overview hi ghlights the processing, structure, and thermodynamic-kinetic aspects of these nanophase composite materials with a special focus on the opt ical absorption, luminescence of the glasses after the ''striking'' he at treatments.