Simulation results of frequency conversion up to the terahertz region
in semiconductor laser devices, both in bulk and quantum-well structur
es, are presented with a comparison of traveling wave amplifiers and F
abry-Perot oscillators. In both devices conversion gains greater than
0 dB can be achieved with a proper parameter choice. Interesting featu
res of the conversion gain spectra for the oscillator-converter are po
inted out with a discussion of the performances.