ROOM-TEMPERATURE OPERATION OF IN0.4GA0.6AS GAAS SELF-ORGANIZED QUANTUM-DOT LASERS/

Authors
KAMATH K BHATTACHARYA P SOSNOWSKI T NORRIS T PHILLIPS J
Citation
K. Kamath et al., ROOM-TEMPERATURE OPERATION OF IN0.4GA0.6AS GAAS SELF-ORGANIZED QUANTUM-DOT LASERS/, Electronics Letters, 32(15), 1996, pp. 1374-1375
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
15
Year of publication
1996
Pages
1374 - 1375
Database
ISI
SICI code
0013-5194(1996)32:15<1374:ROOIGS>2.0.ZU;2-N
Abstract
We report the room-temperature operating characteristics of InGaAs/GaA s self-organised quantum dot lasers grown by molecular beam epitaxy. T he emission wavelength is 1.028 mu m and J(th) = 650 A/cm(2) for a 90 mu m x 1 mm broad-area laser. Steady-state and time-resolved photolumi nescence measurements confirm that lasing occurs through the e(1)-hh(2 ) higher-order transition, and the spontaneous recombination time for this transition is similar or equal to 200 ps.