STIMULATED BRILLOUIN-SCATTERING SUPPRESSION WITH LOW RESIDUAL AM USING A NOVEL TEMPERATURE WAVELENGTH-DITHERED DFB LASER-DIODE

Authors
ESKILDSEN L HANSEN PB KOREN U MILLER BI YOUNG MG DREYER KF
Citation
L. Eskildsen et al., STIMULATED BRILLOUIN-SCATTERING SUPPRESSION WITH LOW RESIDUAL AM USING A NOVEL TEMPERATURE WAVELENGTH-DITHERED DFB LASER-DIODE, Electronics Letters, 32(15), 1996, pp. 1387-1389
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
15
Year of publication
1996
Pages
1387 - 1389
Database
ISI
SICI code
0013-5194(1996)32:15<1387:SBSWLR>2.0.ZU;2-7
Abstract
The effective threshold for stimulated Brillouin scattering for a data -encoded signal is increased from 11.0 to 23.4dBm by using a temperatu re-tunable laser diode. A 5kHz, sinusoid is applied to a Ti/Pt thin fi m resistor located along the laser contact on top of the device, resul ting in a 10kHz dithering of the wavelength. The residual amplitude mo dulation index at 10kHz is only 1.2 x 10(-4).