170GHZ TRANSFERRED-SUBSTRATE HETEROJUNCTION BIPOLAR-TRANSISTOR

Authors
BHATTACHARYA U SAMOSKA L PULLELA R GUTHRIE J LEE Q AGARWAL B MENSA D RODWELL MJW
Citation
U. Bhattacharya et al., 170GHZ TRANSFERRED-SUBSTRATE HETEROJUNCTION BIPOLAR-TRANSISTOR, Electronics Letters, 32(15), 1996, pp. 1405-1406
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
15
Year of publication
1996
Pages
1405 - 1406
Database
ISI
SICI code
0013-5194(1996)32:15<1405:1THB>2.0.ZU;2-X
Abstract
The authors report transferred-substrate HBTs with an f(max) of 170 GH z and f(tau) of 120 GHz. Devices scaled to deep submicrometre dimensio ns should obtain an f(max) of similar to 500 GHz.