PSEUDOMORPHIC STEP-DOPED CHANNELS FIELD-EFFECT TRANSISTOR (SDCFET)

Authors
LAIH LW TSAI JH WU CZ LIN KW CHENG CC LIU WC LOUR WS
Citation
Lw. Laih et al., PSEUDOMORPHIC STEP-DOPED CHANNELS FIELD-EFFECT TRANSISTOR (SDCFET), Electronics Letters, 32(15), 1996, pp. 1418-1419
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
15
Year of publication
1996
Pages
1418 - 1419
Database
ISI
SICI code
0013-5194(1996)32:15<1418:PSCFT(>2.0.ZU;2-A
Abstract
A new high performance field-effect transistor using stop-doped n-In0. 15Ga0.85As channels was fabricated and demonstrated. For a 1 x 100 mu m(2) device a high gate breakdown voltage of 15 V, a maximum drain sat uration current of 735 mA/mm a maximum transconductance of 200 mS/mm a nd a wide gate voltage range > 3 V, with the transconductance > 60 mS/ mm, are obtained.