We identify a new mechanism of stress driven surface morphological evo
lution in strained semiconductor films. Surface roughness forms by a c
ooperative mechanism involving the sequential nucleation of islands an
d pits, which is distinct from the conventional view of ripple formati
on as an Asaro-Tiller-Grinfeld (ATG) instability. This mechanism is op
erative both during annealing and growth and competes with the ATG ins
tability as a kinetic pathway to ripple formation.