SURFACE HARDNESS ENHANCEMENT IN ION-IMPLANTED AMORPHOUS-CARBON

Citation
Dh. Lee et al., SURFACE HARDNESS ENHANCEMENT IN ION-IMPLANTED AMORPHOUS-CARBON, Journal of applied physics, 80(3), 1996, pp. 1480-1484
Citations number
25
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
3
Year of publication
1996
Pages
1480 - 1484
Database
ISI
SICI code
0021-8979(1996)80:3<1480:SHEIIA>2.0.ZU;2-W
Abstract
The feasibility of producing carbon nitride has been studied by ion im plantation into amorphous carbon. Thin films were formed with 100 keV N+ or 80 keV C+ ions al various target temperatures and ion doses. The apparent surface hardness measured by nanoindentation with load-displ acement data shows an optimum value of 22.3 +/- 0.4 GPa with the ion d ose of 2 X 10(17) N+/cm(2) implanted at -100 degrees C, while the hard ness of the unimplanted amorphous carbon is 6.0 +/- 0.2 GPa. Self-impl antation by carbon also produces similar hardness enhancement with a n arrow temperature window. The maximum enhanced surface hardness is wel l correlated with the asymmetric diffuse peak at around 1500 cm(-1) in Raman spectroscopy. (C) 1996 American Institute of Physics.