MONTE-CARLO PARTICLE SIMULATION OF A QUANTUM-WELL HETEROJUNCTION FIELD-EFFECT TRANSISTOR - COMPARISON WITH EXPERIMENTAL-DATA

Authors
Citation
C. Moglestue, MONTE-CARLO PARTICLE SIMULATION OF A QUANTUM-WELL HETEROJUNCTION FIELD-EFFECT TRANSISTOR - COMPARISON WITH EXPERIMENTAL-DATA, Journal of applied physics, 80(3), 1996, pp. 1499-1503
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
3
Year of publication
1996
Pages
1499 - 1503
Database
ISI
SICI code
0021-8979(1996)80:3<1499:MPSOAQ>2.0.ZU;2-4
Abstract
A heterojunction field-effect transistor with a quantum well channel h as been studied using the Monte Carlo particle model. The transport in the channel has been calculated both considering and neglecting the e ffect of energy quantization of the conduction band. The results of th e two approaches were found to agree well with each other and with exp erimental data. The significant differences between classical and quan tum mechanical calculations are the better confinement of the carrier in the channel and the better agreement of the transfer characteristic s with experiment for the latter. (C) 1996 American Institute of Physi cs.