EFFECT OF STRAY CAPACITANCES ON SINGLE-ELECTRON TUNNELING IN A TURNSTILE

Based on the exact solution for the potential profile of the 2N turnst ile with equal junction capacitances C, equal stray capacitances C-0, and a coupling capacitance C-c, we obtain explicit expressions for the Gibbs free energy as well as the corresponding charging energy and th e barrier height, In particular, we analyze the effects of the stray c apacitances on the turnstile operation. In the C-0=0 case, our results for the turnstile operation reduce to those of D. V. Averin, A. A. Od intsov, S. V. Vyshenskii [J. Appl. Phys. 73, 1297 (1993)]. In general, when C-0/C is increased, the operable region of tile turnstile decrea ses. Thus, in order to have a high quality turnstile, it is necessary to keep the stray capacitances small. (C) 1996 American Institute of P hysics.