The electron spin resonance studies have been carried out in the tempe
rature range 130-300 K on semiconducting beta-FeSi2, single crystals g
rown by a chemical vapor transport technique. Two anisotropic doublets
with apparent g factors in the range 2.025-2.05 and 1.95-2.03, as wel
l as one complex signal having an isotropic g factor of 2.0195 and exh
ibiting a five-line hyperfine structure, have been detected. The doubl
et signals are believed to arise from spin tripler (S=1) states of, pr
esumably, substitutional Ni2+ transition ions, whereas the signal exhi
biting the hyperfine structure has been attributed to the spin of a ho
le, captured by silicon vacancy and interacting with nuclear spins of
four iran atoms in the first shell surrounding of the silicon vacancy.
(C) 1996 American Institute of Physics.