TRANSIENT DEVICE MODELING USING THE LEI-TING HYDRODYNAMIC BALANCE-EQUATIONS

A transient semiconductor device simulation model based on the recentl y developed Lei-Ting hydrodynamic balance equations is presented. Unli ke other hydrodynamic models, where the various relaxation rates are i mported from Monte Carlo calculations or simply assumed to be constant , our model calculates these relaxation rates within the simulation pr ocess, as functions of the electron drift velocity, electron temperatu re, as well as the electron density. Without any complicated mathemati cs, a decoupled method with a relatively large time step has been appl ied to the transient simulation on a one-dimensional ballistic diode. (C) 1996 American Institute of Physics.