ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE FROM STRAINED SIGE SI QUANTUM-WELL/

Authors
DONG WF YANG QQ LI J WANG QM CHUI QA ZHOU JM HUANG Q
Citation
Wf. Dong et al., ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE FROM STRAINED SIGE SI QUANTUM-WELL/, Acta physica Sinica, 5(6), 1996, pp. 456-462
Citations number
9
Categorie Soggetti
Physics
Journal title
Acta physica Sinica → ACNP
ISSN journal
10003290
Volume
5
Issue
6
Year of publication
1996
Pages
456 - 462
Database
ISI
SICI code
1000-3290(1996)5:6<456:EAPFSS>2.0.ZU;2-B
Abstract
Photo-luminescence and electro-luminescence from step-graded index SiG e/Si quantum well grown by molecular beam epitaxy is reported. The SiG e/Si step-graded index quantum well structure is beneficial to the enh ancing of electro-luminescence. The optical and electrical properties of this structure are discussed.