A 200-MHZ CMOS Q-ENHANCED LC BANDPASS FILTER

Citation
Wb. Kuhn et al., A 200-MHZ CMOS Q-ENHANCED LC BANDPASS FILTER, IEEE journal of solid-state circuits, 31(8), 1996, pp. 1112-1122
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00189200
Volume
31
Issue
8
Year of publication
1996
Pages
1112 - 1122
Database
ISI
SICI code
0018-9200(1996)31:8<1112:A2CQLB>2.0.ZU;2-F
Abstract
This paper presents design techniques and performance bounds for imple menting Q-enhanced, LC bandpass filters in silicon IC technologies. Th ese filters offer significant advantages over switched capacitor and G m-C based designs, including higher frequency of operation and lower p ower consumption for a given dynamic range. A prototype 200 MHz, fourt h-order filter implemented in a 2 mu m n-well CMOS process is describe d, and measured performance is compared with theoretical predictions. The prototype filter operates at a selectivity Q of 100 and draws less than 8 mA when operating from 3 to 5 V supplies, making it potentiall y suitable for use as a first IF filter in modern cellular and PCS rec eivers.