THE IBMCT - A NOVEL MOS-GATED THYRISTOR STRUCTURE

This paper is addressed to the analysis of the Insulated Base MOS-Cont rolled Thyristor (IBMCT), a novel MOS-thyristor structure compatible w ith an IGBT process technology. The IBMCT turn-off process is based on the existence of a Floating Ohmic Contact (FOC) which allows the fast hole removal from the p-body region. The device operation mode and it s electrical characteristics are analyzed with the aid of 2-D numerica l simulations. Experimental measurements confirm the ability to contro l both turn-on and turn-off processes by biasing the two independent g ate electrodes. A comparison of its electrical characteristics with th ose obtained from IGBT and BRT are also provided.