SPATIAL TEMPERATURE PROFILES DUE TO NONUNIFORM SELF-HEATING IN LDMOSSIN THIN SOI

Temperature profiles resulting from self-heating in SOI-LDMOS devices with uniformly doped and linearly graded drift regions were measured u sing a resistance thermometry technique. Two-dimensional electrotherma l device simulations were performed and the results agreed with the ex periments. Because of the different power dissipation profiles, RESURF devices with a uniformly doped drift region assume a fairly uniform t emperature distribution while devices with a linearly graded drift reg ion have a much higher temperature rise near the source than the drain , This local hot spot near the source raises reliability issues in dev ice design.