INFLUENCE OF DOPING ANION ON ELECTROCHEMICAL AND PHYSICAL-PROPERTIES OF POLYSELENIENYL THIOPHENE POLYMER

The effect of counter ions on electrochemical and physical properties of polyselenienyl thiophene (PSeT) films was investigated. The films w ere prepared by anodic oxidation of selenienyl thiophene in acetonitri le using PF6-, ClO4-, BF4- and CF3SO3- as the doping anion. Electroche mical characterization of these films using the same electrolyte as th at used for electrosynthesis shows that their electrochemical properti es are mainly controlled by the anion. The influence of the electrolyt e on the morphology and the conductivity of PSeT films has been analys ed. We have demonstrated an anion effect that can be related to the si ze of the counter ion. Fourier transform infrared (FT-IR) spectra of p olymer with various doping species have been obtained. The bands speci fic to each doping species are distinctly observable for the doped PSe T films.