MICRO X-RAY PHOTOELECTRON-SPECTROSCOPY OF THE LASER-ABLATED SILICON SURFACE WITH A LASER-PRODUCED PLASMA X-RAY SOURCE

Citation
T. Ohchi et al., MICRO X-RAY PHOTOELECTRON-SPECTROSCOPY OF THE LASER-ABLATED SILICON SURFACE WITH A LASER-PRODUCED PLASMA X-RAY SOURCE, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 37-40
Citations number
8
Categorie Soggetti
Spectroscopy
ISSN journal
03682048
Volume
80
Year of publication
1996
Pages
37 - 40
Database
ISI
SICI code
0368-2048(1996)80:<37:MXPOTL>2.0.ZU;2-0
Abstract
A laboratory-scale photoelectron microscope was constructed using a la ser-produced plasma X-ray source and a high resolution focusing mirror . The energy resolution of 2 eV and the spatial resolution of 20 mu m were obtained. To study a laser ablated silicon surface, Si 2p core le vel photoelectron spectra were examined before and after laser irradia tion. The peak energy of the photoelectron spectra was shifted from th at of the oxidized state to that of the unoxidized one. The result sho ws that the oxide layer of the silicon surface was removed after the l aser ablation. The microscope could be used to observe these states of the Si surface in situ.