T. Ohchi et al., MICRO X-RAY PHOTOELECTRON-SPECTROSCOPY OF THE LASER-ABLATED SILICON SURFACE WITH A LASER-PRODUCED PLASMA X-RAY SOURCE, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 37-40
A laboratory-scale photoelectron microscope was constructed using a la
ser-produced plasma X-ray source and a high resolution focusing mirror
. The energy resolution of 2 eV and the spatial resolution of 20 mu m
were obtained. To study a laser ablated silicon surface, Si 2p core le
vel photoelectron spectra were examined before and after laser irradia
tion. The peak energy of the photoelectron spectra was shifted from th
at of the oxidized state to that of the unoxidized one. The result sho
ws that the oxide layer of the silicon surface was removed after the l
aser ablation. The microscope could be used to observe these states of
the Si surface in situ.