RELAXATION OF SELECTIVELY EXCITED ATOMS AT THE SURFACE OF RARE-GAS DOPED RARE-GAS SOLIDS

Citation
M. Runne et al., RELAXATION OF SELECTIVELY EXCITED ATOMS AT THE SURFACE OF RARE-GAS DOPED RARE-GAS SOLIDS, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 61-64
Citations number
8
Categorie Soggetti
Spectroscopy
ISSN journal
03682048
Volume
80
Year of publication
1996
Pages
61 - 64
Database
ISI
SICI code
0368-2048(1996)80:<61:ROSEAA>2.0.ZU;2-O
Abstract
Following primary selective P-3(1) type excitation of rare-gas guest a toms at the surface of rare-gas host crystals two relaxation channels are observed, (i) the desorption of electronically excited guest atoms , and (ii) the radiative decay of weakly bound atomic P-3(1) and P-3(2 ) type and of molecular-type surface centers. The desorption of excite d atoms is ascribed to the 'cavity-ejection mechanism'. The emitting a tomic-type centers consist of guest atoms in an 'on-top' geometry. Mea surements have been performed on all systems with positive V-0 values.