SYNCHROTRON-RADIATION ETCHING OF DIAMOND SURFACES IN THE LOW-PRESSUREATMOSPHERE OF O-2 AND SF6

Authors
ISHIGURO E OHASHI H SASANO T SHOBATAKE K
Citation
E. Ishiguro et al., SYNCHROTRON-RADIATION ETCHING OF DIAMOND SURFACES IN THE LOW-PRESSUREATMOSPHERE OF O-2 AND SF6, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 77-80
Citations number
8
Categorie Soggetti
Spectroscopy
Journal title
Journal of electron spectroscopy and related phenomena → ACNP
ISSN journal
03682048
Volume
80
Year of publication
1996
Pages
77 - 80
Database
ISI
SICI code
0368-2048(1996)80:<77:SEODSI>2.0.ZU;2-9
Abstract
We report that etching of diamond has been successfully performed for the first time with the aid of synchrotron radiation excitation in the atmosphere of O-2 even at a low temperature of -140 degrees C.