INITIAL-STAGES OF NANOCRYSTAL GROWTH OF COMPOUND SEMICONDUCTORS ON SISUBSTRATES

we grew compound semiconductor nanocrystals on passivated Si surfaces, which were characterized by photoelectron spectroscopy and RHEED (ref lection high energy electron diffraction). The Ga-deposited Si(111) su rface with a 1x1 RHEED pattern was significantly converted into GaSb n anocrystals by Sb beam irradiation at 500 degrees C. In order to grow better quality GaSb nanocrystals, Se-terminated Si surfaces were emplo yed, and about 20 nm uniform GaSb nanocrystals were grown, whose cryst allinity of good quality was verified by cross-sectional TEM. For InAs nanocrystals, hydrogen-terminated Si surfaces are suitable for growth at as low substrate temperature as 300 degrees C.