SYNCHROTRON-RADIATION STUDIES ON METAL SEMICONDUCTOR INTERFACE ELECTRONIC-STRUCTURES/

Citation
Xy. Zhang et al., SYNCHROTRON-RADIATION STUDIES ON METAL SEMICONDUCTOR INTERFACE ELECTRONIC-STRUCTURES/, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 155-160
Citations number
20
Categorie Soggetti
Spectroscopy
ISSN journal
03682048
Volume
80
Year of publication
1996
Pages
155 - 160
Database
ISI
SICI code
0368-2048(1996)80:<155:SSOMSI>2.0.ZU;2-I
Abstract
Some progresses of the photoemission study on metal/semiconductor inte rfaces with synchrotron radiation at NSRL are reviewed in this paper. The possibility that the magnetic ordering exists in the ultra-thin ov erlayer of Mn on semiconductor surface is proposed. The formation of i nterface for Sm/Si(100)2x1 and its thermal evolution have been investi gated. For alkali and alkali-earth metal doped C-60 the doping effect and the interaction between doping and C-60 have been studied. Finally , the interface formation and the band offsets of Ge/ZnS(111) and Ge/Z nSe(100) are discussed in the text.