BAND-DISPERSION-ORIGINATED PHOTOELECTRON INTENSITY OSCILLATIONS DURING SI EPITAXIAL-GROWTH ON SI(100)

The photoelectron intensities from the surface states on Si(100) perio dically oscillate during Si growth and that oscillation is associated with the alternation between the 2x1 and the 1x2 surface reconstructio ns [Y.Enta et al., Surf. Sci. 313(1994)L797]. For clarifying the origi n of the oscillation in more detail, le-resolved-ultraviolet-photoelec tron-spectroscopy measurements for both Si(100)2x1 and 1x2 clean surfa ces have been performed. As a result, it was found that the photoelect ron intensity oscillations on Si(100) arise from the difference in the surface band dispersions between the 2x1 and the 1x2 clean surfaces.