Fy. Yang et al., VALENCE-BAND OFFSET AND INTERFACE FORMATION OF GE ZNSE(100) STUDIED BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 193-196
The formation and band lineup of the Ge/ZnSe(100) interface have been
studied by synchrotron radiation photoemission spectroscopy. Core leve
l intensity measurements from the ZnSe substrate as well as from the G
e overlayer show a two-dimensional deposition of Ge film. Core level s
pectra indicate that Ge atoms react with Se atoms slightly at the inte
rface. We derive a valence band offset of 1.76 +/- 0.1 eV for Ge/ZnSe(
100).