VALENCE-BAND OFFSET AND INTERFACE FORMATION OF GE ZNSE(100) STUDIED BY SYNCHROTRON-RADIATION PHOTOEMISSION/

Authors
YANG FY BAN DY FANG RC XU SH XU PS YUAN SX
Citation
Fy. Yang et al., VALENCE-BAND OFFSET AND INTERFACE FORMATION OF GE ZNSE(100) STUDIED BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 193-196
Citations number
23
Categorie Soggetti
Spectroscopy
Journal title
Journal of electron spectroscopy and related phenomena → ACNP
ISSN journal
03682048
Volume
80
Year of publication
1996
Pages
193 - 196
Database
ISI
SICI code
0368-2048(1996)80:<193:VOAIFO>2.0.ZU;2-1
Abstract
The formation and band lineup of the Ge/ZnSe(100) interface have been studied by synchrotron radiation photoemission spectroscopy. Core leve l intensity measurements from the ZnSe substrate as well as from the G e overlayer show a two-dimensional deposition of Ge film. Core level s pectra indicate that Ge atoms react with Se atoms slightly at the inte rface. We derive a valence band offset of 1.76 +/- 0.1 eV for Ge/ZnSe( 100).