Dy. Ban et al., SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY OF GE ZNS(111) HETEROJUNCTION/, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 197-200
The band lineup at the Ge/ZnS(111) interface has been studied by synch
rotron radiation photoemission spectroscopy. The experimental results
indicate that the deposition of Ge films by evaporation is a two-dimen
sional growth at the initial stage. With the growing of Ge overlayer,
surface S atoms diffuse into Ge overlayer and react with Ge atoms at t
he interface. We derive the valence band offsets of 1.94 +/- 0.1 eV an
d 2.23 +/- 0.1 eV for Ge/ZnS heterojunctions grown at 200 degrees C an
d room temperature, respectively. The results are in good agreement wi
th theoretical predictions.