STABLE SILICON PHOTODIODES FOR ABSOLUTE INTENSITY MEASUREMENTS IN THEVUV AND SOFT-X-RAY REGIONS

Stable silicon photodiodes with 100% internal quantum efficiency have been developed for the vacuum ultraviolet and soft x-ray regions. It i s demonstrated that the response of these detectors can be reasonably well represented by a simple model for photon energies above 40 eV. Th e measured efficiency is consistent with a constant electron-hole pair creation energy for Si above 40 eV. Radiation damage is demonstrated to result in loss of carriers to recombination at the front surface. T ile uniformity of the diodes is shown to be better than 0.1% RMS at 11 0 eV.