MULTILAYER SPUTTER-DEPOSITION STRESS-CONTROL

The dependence of the intrinsic stress of sputter deposited thin films on the power applied to the RF magnetron plasma was investigated. Mol ybdenun films show tensile stress while silicon films show compressive stress using RF power between 100- and 500-W. The multilayer stress d epends strongly on the RF power applied. Low stress multilayer films w ere produced by varying the relative thickness of each layer and by va rying the RF power applied during deposition. Using this approach 10-m m square free-standing semi-transparent multilayer films with good fla tness and small roughness were fabricated.