STUDIES ON HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION OF DIAMOND ONTO ALUMINUM-OXIDE

Authors
SUMANT AV GODBOLE VP KSHIRSAGAR ST
Citation
Av. Sumant et al., STUDIES ON HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION OF DIAMOND ONTO ALUMINUM-OXIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 39(3), 1996, pp. 5-9
Citations number
14
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
39
Issue
3
Year of publication
1996
Pages
5 - 9
Database
ISI
SICI code
0921-5107(1996)39:3<5:SOHCOD>2.0.ZU;2-9
Abstract
In situ two-step hot filament chemical vapor deposition (HFCVD) was de veloped to synthesize diamond films on aluminum oxide (Al2O3) substrat es. The first step at higher temperature leads to precipitation of dia mond-like carbon (DLC) and aluminum carbide (Al4C3) phases on the subs trate surface, which promote enhanced nucleation of diamond growth dur ing the subsequent second step of deposition. The presence of carbide phase in the interface region is found to lead to [100] oriented growt h of diamond as well as enhanced adhesion properties.