ALGAN INGAN/GAN BLUE-LIGHT-EMITTING DIODE DEGRADATION UNDER PULSED CURRENT STRESS/

This study focused on the performance of commercial AlGaN/InGaN/GaN bl ue light emitting diodes (LEDs) under high current pulse conditions. T he results of deep level transient spectroscopy (DLTS), thermally stim ulated capacitance, and admittance spectroscopy measurements performed on stressed devices, showed no evidence of any deep-level defects tha t may have developed as a result of high current pulses. Physical anal ysis of stressed LEDs indicated a strong connection between the high i ntrinsic defect density in these devices and the resulting mode of deg radation. (C) 1996 American Institute of Physics.