OBSERVATION OF MISFIT DISLOCATIONS AT THE INXGA1-XAS GAAS INTERFACE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY/

Authors
LEE EY BHARGAVA S CHIN MA NARAYANAMURA V POND KJ LUO K
Citation
Ey. Lee et al., OBSERVATION OF MISFIT DISLOCATIONS AT THE INXGA1-XAS GAAS INTERFACE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY/, Applied physics letters, 69(7), 1996, pp. 940-942
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
7
Year of publication
1996
Pages
940 - 942
Database
ISI
SICI code
0003-6951(1996)69:7<940:OOMDAT>2.0.ZU;2-J
Abstract
We report ballistic-electron-emission microscopy (BEEM) imaging and sp atially resolved spectroscopy of InxGa1-xAs/GaAs misfit dislocations 8 00 Angstrom below the surface. Majority-carrier scattering by a fracti on of misfit dislocations was seen to locally reduce the BEEM current and to give logarithmic spatial dependence, which suggests charging of the dislocation cores. (C) 1996 American Institute of Physics.