DEMONSTRATION OF LIGHT-HOLE BEHAVIOR IN QUATERNARY GAINASSB ALGAASSB QUANTUM-WELLS USING INFRARED PHOTOLUMINESCENCE SPECTROSCOPY/

We report an infrared comparative photoluminescence and absorption stu dy of optical properties in quaternary GaInAsSb/AlGaAsSb strained sing le-quantum-well structures grown by molecular beam epitaxy with the in dium composition of 0.25 and 0.33. The light-hole-related luminescence structure observed in the lower indium composition sample disappears in the sample with higher indium composition due to the larger band sp litting of heavy and light holes induced by the strain. This observed transition from type I to type FI states for light holes is in good ag reement with our theoretical prediction that it may occur for the indi um composition larger than 0.30. (C) 1996 American Institute of Physic s.