EVOLUTION OF IMPLANTED CARBON IN SILICON UPON PULSED EXCIMER-LASER ANNEALING

Formation of epitaxial Si1-yCy substitutional alloy layers on monocrys talline silicon surfaces with y approximate to 1 at. % is reported, Th e preparation method was carbon ion implantation, followed by KrF exci mer laser annealing. Results of Rutherford backscattering (RES), secon dary ion mass spectrometry (SIMS) and infrared absorption analyses are compared. The authors concluded that, up to similar to 1 at. % carbon content, the dominant process is nonequilibrium trapping of carbon in substitutional lattice sites upon fast resolidification. Above this c oncentration the complex carbon redistribution processes are influence d by silicon carbide precipitation in the melt and segregation effects in the near-surface region. (C) 1996 American Institute of Physics.