QUANTUM-WELL INTERMIXING IN SI1-XGEX SI STRAINED-LAYER HETEROSTRUCTURES USING ION-IMPLANTATION/

Authors
LABRIE D LAFONTAINE H ROWELL N CHARBONNEAU S HOUGHTON D GOLDBERG RD MITCHELL IV
Citation
D. Labrie et al., QUANTUM-WELL INTERMIXING IN SI1-XGEX SI STRAINED-LAYER HETEROSTRUCTURES USING ION-IMPLANTATION/, Applied physics letters, 69(7), 1996, pp. 993-995
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
7
Year of publication
1996
Pages
993 - 995
Database
ISI
SICI code
0003-6951(1996)69:7<993:QIISSS>2.0.ZU;2-Z
Abstract
A demonstration of quantum well intermixing using ion implantation in S1-xGex/Si strained-layer heterostructures is presented. The quantum w ell related photoluminescence lines of implanted and annealed samples are blue shifted by up to 40 meV relative to those measured in anneale d-only samples. Optical and structural qualities of the heterostructur e remain high after implantation and annealing treatments. (C) 1996 Am erican Institute of Physics.