EFFECT OF RAPID THERMAL ANNEALING ON CARRIER LIFETIMES OF ARSENIC-ION-IMPLANTED GAAS

Femtosecond time-resolved reflectivity measurements, structural, and e lectrical analyses have been performed to investigate the effect of ra pid thermal annealing (RTA) on GaAs implanted with 200 keV arsenic ion s at 10(16) ions/cm(2). Ultrashort carrier lifetimes from 0.48 fs to 2 .3 ps were observed for samples annealed at temperatures between 600 a nd 800 degrees C. The time constants are somewhat shorter than those o f RTA-annealed low-temperature molecular-beam epitaxy grown material, while following the same trend of longer time constants and recovery o f resistance at higher annealing temperatures. Arsenic precipitates we re not observed. (C) 1996 American Institute of Physics.