GROWTH OF COLOSSAL MAGNETORESISTANCE THIN-FILMS ON SILICON

Citation
Z. Trajanovic et al., GROWTH OF COLOSSAL MAGNETORESISTANCE THIN-FILMS ON SILICON, Applied physics letters, 69(7), 1996, pp. 1005-1007
Citations number
25
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
7
Year of publication
1996
Pages
1005 - 1007
Database
ISI
SICI code
0003-6951(1996)69:7<1005:GOCMTO>2.0.ZU;2-F
Abstract
We are able to grow high quality La0.67Sr0.33MnO3(LSMO) colossal magne toresistive (CMR) thin films on Y-stabilized zirconia (YSZ) buffered ( 100) Si substrates using a Bi4Ti3O12 texturing and lattice matching la yer, The CMR films have very high structural perfection and show excel lent transport and ferromagnetic properties, including the almost full saturation magnetization values and narrow ferromagnetic resonance pe aks (15 Oe at 290 K). The lattice matching template/buffer layer appro ach is suitable for the high quality CMR films on Si. A close correlat ion between the magnetic hysteresis loop and the field dependence of M R is observed at lower temperatures. (C) 1996 American Institute of Ph ysics.