SIMULATIONS OF HARDENED COMPONENTS AND CIRCUITS

Physical simulation of single, hardened transistors is an essential st ep towards a thorough understanding of the underlying basic phenomena of components under irradiation. Results gathered from this physical, microscopic simulation, should be confirmed by measurements on actual components. This procedure leads to an analytical, macroscopic transis tor modelling, well suited to the electrical simulation of complex int egrated circuits, including thousands of elementary components, operat ing both under the radiative and non-radiative environments.