INALAS INGAAS METAMORPHIC LOW-NOISE HEMT

An In0.52Al0.48As/In0.53Ga0.47As metamorphic low-noise high electron m obility transistor (HEMT) has been developed, A growth temperature by molecular beam epitaxy (MBE) and a thickness of a linearly graded InAl As buffer layer have been optimized in order to reduce the density of lattice-misfit dislocation, Relatively high sheet electron density and mobility of 2.6 x 10(12) cm(-2) and 9500 cm(2)/V sec at room temperat ure, respectively, are obtained. A 0.1-mu m-gate low-noise HEMT is fab ricated using the developed epitaxial wafer, A minimum noise figure of 0.48 dB with an associated gain of 14.2 dB has been obtained at 18 GH z.